BUK9535-55A NXP Semiconductors, BUK9535-55A Datasheet - Page 7

• Manufacturer Part Number: BUK9535-55A
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9535-55A
Product data sheet
Fig 11. Forward transconductance as a function of
Fig 13. Gate-source threshold voltage as a function of
V
GS(th)
g
(S)
(V)
fs
2.5
2.0
1.5
1.0
0.5
25
20
15
10
5
0
0
−100
drain current; typical values
junction temperature
V
I
0
D
DS
= 1 mA; V
> I
5
D
x R
10
DSon
DS
0
= V
15
maximum
GS
minimum
typical
20
100
25
T
All information provided in this document is subject to legal disclaimers.
j
(°C)
003aaf291
003aaf293
30
I
D
(A)
200
35
Rev. 02 — 28 April 2011
Fig 12. Normalized drain-source on-state resistance
Fig 14. Sub-threshold drain current as a function of
(A)
I
10
10
10
10
10
10
a
D
3.5
2.5
1.5
0.5
−1
−2
−3
−4
−5
−6
−100
0.5
factor as a function of junction temperature
gate-source voltage
I
T
D
j
= 25 A; V
= 25 °C; V
N-channel TrenchMOS logic level FET
1.0
GS
2 %
DS
0
= 5 V
= V
BUK9535-55A
GS
1.5
typical
100
2.0
T
© NXP B.V. 2011. All rights reserved.
mb
98 %
V
003aaf294
003aaf292
GS
(°C)
(V)
200
2.5
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