BUK9E04-30B NXP Semiconductors, BUK9E04-30B Datasheet
BUK9E04-30B
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BUK9E04-30B Summary of contents
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... BUK9E04-30B N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
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... DS see Figure 13 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol ...
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... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µs; ...
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... Capped due to package 10 Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET 03no73 = 10 μ 100 μ 100 ...
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... °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...
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... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage ...
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... Fig 10. Gate-source threshold voltage as a function of 03no71 3.4 3.6 3 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 − junction temperature ...
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... 175 ° ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03no65 0.8 1.0 V (V) SD © ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9E04-30B v.2 20110216 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
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... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 February 2011 Document identifier: BUK9E04-30B ...