BUK9E04-30B NXP Semiconductors, BUK9E04-30B Datasheet
![Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415241/sot226_3d_sml.gif)
BUK9E04-30B
Available stocks
Related parts for BUK9E04-30B
BUK9E04-30B Summary of contents
Page 1
... BUK9E04-30B N-channel TrenchMOS logic level FET Rev. 02 — 16 February 2011 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. ...
Page 2
... DS see Figure 13 Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min ≤ sup = °C; j Graphic symbol ...
Page 3
... T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min - - -15 [1] Figure 1 - [2] Figure 1; - [1] - ≤ 10 µs; ...
Page 4
... Capped due to package 10 Conditions see Figure 4 vertical in still air −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET 03no73 = 10 μ 100 μ 100 ...
Page 5
... °C j from source lead to source bond pad °C j All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min Typ Max 1.1 1 ...
Page 6
... V (V) DS Fig 6. 03ng53 typ max (V) GS Fig 8. All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Min - - = 25 ° DSon (mΩ Drain-source on-state resistance as a function of gate-source voltage ...
Page 7
... Fig 10. Gate-source threshold voltage as a function of 03no71 3.4 3.6 3 210 280 350 I (A) D Fig 12. Normalized drain-source on-state resistance All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET 2.5 GS(th) (V) 2.0 max 1.5 typ min 1.0 0.5 0 − junction temperature ...
Page 8
... 175 ° ° 0.0 0.2 0.4 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET C iss C oss C rss 0 − function of drain-source voltage; typical values 03no65 0.8 1.0 V (V) SD © ...
Page 9
... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
Page 10
... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date BUK9E04-30B v.2 20110216 • Modifications: The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. ...
Page 11
... In case an individual All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET © NXP B.V. 2011. All rights reserved ...
Page 12
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 16 February 2011 BUK9E04-30B N-channel TrenchMOS logic level FET Trademarks © NXP B.V. 2011. All rights reserved ...
Page 13
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 16 February 2011 Document identifier: BUK9E04-30B ...