buk9e04 NXP Semiconductors, buk9e04 Datasheet
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buk9e04 Summary of contents
Page 1
... BUK9E04-30B TrenchMOS™ logic level FET Rev. 01 — 14 November 2003 1. Product profile 1.1 Description N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive TrenchMOS™ technology. 1.2 Features Very low on-state resistance 175 C rated 1.3 Applications Automotive systems Motors, lamps and solenoids 1 ...
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... pulsed unclamped inductive load starting Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET Version 2 -PAK); low-profile 3 lead SOT226 Min Max Unit - [1] - 183 ...
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... Fig 2. Continuous drain current as a function of mounting base temperature Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET 03no74 Capped due to package 50 100 150 200 03no73 100 ...
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... Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration. 9397 750 12108 Product data Conditions Figure 4 vertical in still air Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET Min Typ Max Unit - - 0.59 K K/W 03no75 ...
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... from drain lead 6 mm from - package to center of die from upper edge of drain - mounting base to center of die from source lead to source - bond pad Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET Typ Max Unit - - 1 2.3 V ...
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... Conditions Min Figure /dt = 100 Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET Typ Max Unit 0.85 1 © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... ---------------------------- - R Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET 03no69 ( 03aa27 0 60 120 DSon DSon 25 C © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... MHz GS Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values. Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET 03ng53 min typ max 0 0.5 1 1 ...
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... 175 0.0 0.2 0.4 0.6 0.8 Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET 03no66 (nC 03no65 1 (V) © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... 0.7 9.65 1.5 10.3 15.0 2.54 0.4 8.65 1.1 9.7 13.5 REFERENCES JEDEC JEITA low-profile 3-lead TO-220AB Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET base max 3.30 2.6 3.0 2.79 2.2 EUROPEAN ISSUE DATE PROJECTION 99-09-13 03-10-14 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. SOT226 ...
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... Philips Semiconductors 8. Revision history Table 6: Revision history Rev Date CPCN Description 01 20031114 - Product data (9397 750 12108) 9397 750 12108 Product data Rev. 01 — 14 November 2003 BUK9E04-30B TrenchMOS™ logic level FET © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 14 November 2003 Rev. 01 — 14 November 2003 BUK9E04-30B BUK9E04-30B TrenchMOS™ logic level FET TrenchMOS™ logic level FET Fax: + 24825 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 November 2003 Document order number: 9397 750 12108 BUK9E04-30B TrenchMOS™ logic level FET ...