BUK9Y19-55B NXP Semiconductors, BUK9Y19-55B Datasheet - Page 3

• Manufacturer Part Number: BUK9Y19-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y19-55B_3
Product data sheet
Fig 1. Continuous drain current as a function of
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
I
50
40
30
20
10
D
0
V
mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
5V
50
j
j
= 25 °C.
= 150 °C.
100
10
10
(A)
I
10
AL
-1
150
2
1
10
-3
T
mb
03nl99
(°C)
Rev. 03 — 29 February 2008
200
10
-2
10
-1
Fig 2. Normalized total power dissipation as a
(1)
(2)
(3)
P
(%)
der
120
80
40
0
1
P
function of mounting base temperature
0
der
t
AL
03np79
(ms)
=
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
P
10
50
tot
× 100 %
BUK9Y19-55B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
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