BUK9Y40-55B NXP Semiconductors, BUK9Y40-55B Datasheet - Page 3

• Manufacturer Part Number: BUK9Y40-55B
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BUK9Y40-55B_3
Product data sheet
Fig 1. Continuous drain current as a function of
Fig 3. Single-shot and repetitive avalanche rating; avalanche current as a function of avalanche period
(A)
I
30
20
10
D
0
V
mounting base temperature
(1) Single pulse;T
(2) Single pulse;T
(3) Repetitive.
GS
0
5V
50
j
j
= 25 °C.
= 150 °C.
100
I
(A)
AV
10
10
10
10
−1
−2
150
1
2
10
−3
T
mb
03nn93
(°C)
Rev. 03 — 22 February 2008
200
10
−2
10
−1
Fig 2. Normalized total power dissipation as a
P
(1)
(2)
(3)
(%)
der
120
80
40
0
P
function of mounting base temperature
1
0
der
t
AV
=
(ms)
03np80
P
N-channel TrenchMOS logic level FET
tot ( 25°C )
P
10
50
tot
× 100 %
BUK9Y40-55B
100
150
© NXP B.V. 2008. All rights reserved.
T
mb
03na19
(°C)
200
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