BSS84AK NXP Semiconductors, BSS84AK Datasheet - Page 4

• Manufacturer Part Number: BSS84AK
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS84AK
Product data sheet
Fig 3.
(A)
-10
-10
-10
I
D
-1
-1
-2
-3
-10
voltage
I
(1) t
(2) t
(3) t
(4) DC; T
(5) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
-1
is single pulse
p
p
p
= 1 ms
= 10 ms
= 100 ms
sp
amb
= 25 °C
= 25 °C; drain mounting pad 1 cm
All information provided in this document is subject to legal disclaimers.
-1
Rev. 1 — 23 May 2011
2
50 V, 180 mA P-channel Trench MOSFET
-10
V
DS
(V)
BSS84AK
© NXP B.V. 2011. All rights reserved.
(1)
(2)
(3)
(4)
(5)
001aao123
-10
2
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