BSS84AK NXP Semiconductors, BSS84AK Datasheet - Page 9

• Manufacturer Part Number: BSS84AK
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
BSS84AK
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
GS
-10
-8
-6
-4
-2
0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= -0.2 A; V
= 0 V
j
j
= 150 °C
= 25 °C
0.2
DS
= -25 V; T
amb
0.4
(A)
I
S
-0.3
-0.2
-0.1
= 25 °C
0
Q
0
All information provided in this document is subject to legal disclaimers.
G
001aao132
(nC)
0.6
Rev. 1 — 23 May 2011
-0.4
Fig 15. Gate charge waveform definitions
(1)
-0.8
(2)
V
V
SD
V
V
V
GS(pl)
001aao133
DS
GS(th)
GS
50 V, 180 mA P-channel Trench MOSFET
(V)
-1.2
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
BSS84AK
© NXP B.V. 2011. All rights reserved.
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