BSS84AKM NXP Semiconductors, BSS84AKM Datasheet
BSS84AKM
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BSS84AKM Summary of contents
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... BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 ...
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... SOT883 (SOT883) Description leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm Marking code ZA All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Graphic symbol sym146 Version SOT883 [1] © ...
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... ° °C amb HBM 001aao121 75 125 175 T (°C) j Fig 2. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Min - -20 [ °C - amb [1] = 100 °C - amb ≤ 10 µ [2] - [1] ...
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... Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage BSS84AKM Product data sheet -1 2 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET 001aao138 (1) (2) (3) (4) (5) -10 ...
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... Transient thermal impedance from junction to ambient as a function of pulse duration; typical values BSS84AKM Product data sheet Conditions in free air − − All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Min Typ Max [1] - 310 360 [2] - 150 175 - ...
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... - Ω °C G(ext -115 mA ° All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Min Typ Max - -1.1 -1 ° ...
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... R DSon (Ω) 10 (4) ( -0.3 -0.4 I (A) D Fig 9. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET (2) (1) 0 -0.5 -1.0 -1.5 -2 ° (1) minimum values (2) typical values (3) maximum values Sub-threshold drain current as a function of ...
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... Fig 11. Normalized drain-source on-state resistance as 001aao130 (1) (2) (3) 120 180 T (°C) j Fig 13. Input, output and reverse transfer capacitances All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET 2.0 a 1.5 1.0 0 function of junction temperature; typical values ...
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... Q (nC °C amb Fig 15. Gate charge waveform definitions -0 (A) -0.2 -0.1 ( -0.4 -0.8 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET GS(pl) V GS(th GS1 GS2 G(tot) ...
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... BSS84AKM Product data sheet duty cycle δ 006aaa812 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... 0.62 1.02 0.30 0.30 0.35 0.65 0.55 0.95 0.22 0.22 REFERENCES JEDEC JEITA SC-101 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET A 0 0.5 scale EUROPEAN PROJECTION SOT883 1 mm ISSUE DATE 03-02-05 03-04-03 © NXP B.V. 2011. All rights reserved ...
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... BSS84AKM Product data sheet 1.3 0.7 R0.05 (12×) 0.7 0.6 0.3 0.4 All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET solder lands solder resist solder paste occupied area Dimensions in mm sot883_fr © NXP B.V. 2011. All rights reserved ...
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... NXP Semiconductors 11. Revision history Table 8. Revision history Document ID Release date BSS84AKM v.1 20110523 BSS84AKM Product data sheet Data sheet status Change notice Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 1 — 23 May 2011 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 23 May 2011 Document identifier: BSS84AKM ...