PHB18NQ10T NXP Semiconductors, PHB18NQ10T Datasheet - Page 4

• Manufacturer Part Number: PHB18NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHB18NQ10T
Product data sheet
Symbol
R
R
Fig 3.
Fig 5.
th(j-mb)
th(j-a)
I
(A)
DM
10
10
10
−1
1
2
currents as a function of drain-source voltage
T
Safe operating area; continuous and peak drain
Transient thermal impedance from junction to mounting base as a function of pulse duration
1
R
mb
Thermal characteristics
DS(on)
= 25 °C; I
Parameter
thermal resistance from
junction to mounting base
thermal resistance from
junction to ambient
= V
DS
/ I
D.C.
10
DM
D
is single pulse
Z
(K/W)
th(j-mb)
10
10
10
2
t
100 μs
1 ms
10 ms
100 ms
p
10
−1
−2
1
10
= 10 μs
V
−6
All information provided in this document is subject to legal disclaimers.
DS
D = 0.5
0.2
0.1
0.05
0.02
single pulse
003aae631
(V)
10
Rev. 02 — 17 December 2010
−5
Conditions
mounted on printed-circuit board ;
minimum footprint
10
3
10
−4
10
−3
Fig 4.
P
10
I
(A)
AS
10
−2
10
t
p
10
−1
1
2
10
T
current as a function of avalanche period
unclamped inductive load
Single-shot avalanche rating; avalanche
−3
10
N-channel TrenchMOS standard level FET
003aae632
−1
T
δ =
t
j
p
prior to avalanche = 150 °C
(s)
T
t
t
p
10
1
−2
10
Min
-
-
PHB18NQ10T
−1
Typ
-
50
25 °C
1
© NXP B.V. 2010. All rights reserved.
t
AV
003aae643
(ms)
Max
1.9
-
10
Unit
K/W
K/W
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