PHB18NQ10T NXP Semiconductors, PHB18NQ10T Datasheet - Page 7

• Manufacturer Part Number: PHB18NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB18NQ10T
Product data sheet
Fig 12. Sub-threshold drain current as a function of
Fig 14. Gate-source voltage as a function of gate
(A)
I
D
V
(V)
10
10
10
10
10
10
GS
16
12
−1
−2
−3
−4
−5
−6
8
4
0
gate-source voltage
charge; typical values
T
T
0
0
j
j
= 25 °C; V
= 25 °C; I
minimum
1
D
V
DS
DD
10
= 18 A
= V
= 20 V
2
GS
typical
3
20
V
DD
Q
maximum
All information provided in this document is subject to legal disclaimers.
4
G
= 80 V
003aae639
003aae641
V
(nC)
GS
(V)
Rev. 02 — 17 December 2010
30
5
Fig 13. Input, output and reverse transfer capacitances
Fig 15. Source (diode forward) current as a function of
(pF)
(A)
I
C
F
10
10
10
10
20
16
12
8
4
0
4
3
2
10
as a function of drain-source voltage; typical
values
source-drain (diode forward) voltage; typical
values
V
V
0
−1
GS
GS
N-channel TrenchMOS standard level FET
= 0 V; f = 1 MHz
= 0 V
0.4
1
T
j
= 175 °C
PHB18NQ10T
0.8
10
T
V
V
© NXP B.V. 2010. All rights reserved.
j
SDS
DS
= 25 °C
003aae640
003aae642
C
C
C
(V)
(V)
oss
iss
rss
10
1.2
2
7 of 12