PHB27NQ10T NXP Semiconductors, PHB27NQ10T Datasheet
PHB27NQ10T
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PHB27NQ10T Summary of contents
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... PHB27NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 17 December 2010 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Simplified outline SOT404 (D2PAK) Description plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T Graphic symbol mbb076 Version SOT404 © NXP B.V. 2010. All rights reserved ...
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... T (°C) mb Fig 2. Normalized continuous drain current as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET Min - = 20 kΩ - -55 - ...
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... All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET (A) 25 °C 10 prior to avalanche = 150 ° −1 10 −3 −2 − Single-shot avalanche rating ...
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... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T Min Typ Max 100 - - 0. ...
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... 175 ° (A) D Fig 9. 014aab246 100 180 T (°C) j Fig 11. Sub-threshold drain current as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET 0.2 DS(on) 4.2 4.4 4.6 4.8 5 (Ω) 0.16 0.12 0.08 0. °C ...
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... V (V) DS Fig 13. Gate-source voltage as a function of gate ( 175 ° 0.4 0.8 All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET °C; I ...
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... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION © NXP B.V. 2010. All rights reserved. SOT404 05-02-11 06-03- ...
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... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PHB27NQ10T separated from data sheet PHB_PHD_PHP27NQ10T v.1. Product specification All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T ...
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... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 17 December 2010 PHB27NQ10T N-channel TrenchMOS standard level FET Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 17 December 2010 Document identifier: PHB27NQ10T ...