PHB27NQ10T NXP Semiconductors, PHB27NQ10T Datasheet - Page 7

• Manufacturer Part Number: PHB27NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHB27NQ10T
Product data sheet
Fig 12. Input, output and reverse transfer capacitances
Fig 14. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values
(pF)
10
10
10
C
10
4
3
2
10
as a function of drain-source voltage; typical
values
V
V
−1
GS
GS
= 0 V; f = 1 MHz
= 0 V
1
10
(A)
l
F
30
20
10
C
C
C
0
oss
rss
iss
V
0
All information provided in this document is subject to legal disclaimers.
DS
014aab248
(V)
Rev. 02 — 17 December 2010
10
2
T
0.4
j
= 175 °C
Fig 13. Gate-source voltage as a function of gate
V
0.8
(V)
GS
16
12
8
4
0
V
charge; typical values
T
T
0
SDS
j
j
= 25 °C
N-channel TrenchMOS standard level FET
= 25 °C; I
014aab250
(V)
5
1.2
10
D
= 27 A
V
DD
15
= 20 V
PHB27NQ10T
20
25
V
DD
© NXP B.V. 2010. All rights reserved.
= 80 V
Q
014aab249
G
30
(nC)
35
7 of 12