PHK12NQ10T NXP Semiconductors, PHK12NQ10T Datasheet
PHK12NQ10T
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PHK12NQ10T Summary of contents
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... PHK12NQ10T N-channel TrenchMOS standard level FET Rev. 02 — 24 November 2009 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... ° ° 11 j(init) D ≤ 100 V; unclamped 0.1 ms sup p Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET Graphic symbol mbb076 4 Version SOT96-1 Min Max - 100 - 100 - ...
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... P der (%) 150 200 T (°C) sp Fig 2. Normalized total power dissipation as a function of solder point temperature Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET 03aa17 0 50 100 150 T (°C) sp 003aaa509 = 10 μ 100 μ 100 ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration PHK12NQ10T_2 Product data sheet Conditions see Figure 4 −3 − Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET Min Typ Max - - 15 003aaa510 δ −1 ...
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... Figure /dt = -100 A/µ ° /dt -100 A/µ ° Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET Min Typ Max 100 - - 1 4 100 ...
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... V GS(th) (V) max − (V) GS Fig 8. Gate-source threshold voltage as a function of junction temperature Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET 003aaa512 = 150 ° ° (V) GS 03aa32 max typ min 0 60 120 T (° ...
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... C (pF (nC) G Fig 12. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET 03al21 0 60 120 T (°C) j 003aaa514 C iss C oss C rss − ...
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... NXP Semiconductors Fig 13. Source current as a function of source-drain voltage; typical values PHK12NQ10T_2 Product data sheet ( 150 ° °C 0 0.2 0.4 0.6 0.8 Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET 003aaa515 1 V (V) SD © NXP B.V. 2009. All rights reserved ...
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... 0.49 0.25 5.0 4.0 6.2 1.27 0.36 0.19 4.8 3.8 5.8 0.019 0.0100 0.20 0.16 0.244 0.05 0.041 0.014 0.0075 0.19 0.15 0.228 REFERENCES JEDEC JEITA MS-012 Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET θ detail 1.0 0.7 1.05 0.25 0.25 0.1 0.4 0.6 0.039 0.028 ...
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... Legal texts have been adapted to the new company name where appropriate. PHK12NQ10T-01 20030915 (9397 750 11949) PHK12NQ10T_2 Product data sheet N-channel TrenchMOS standard level FET Data sheet status Change notice Product data sheet - Product data - Rev. 02 — 24 November 2009 PHK12NQ10T Supersedes PHK12NQ10T-01 - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS— trademark of NXP B.V. to:salesaddresses@nxp.com Rev. 02 — 24 November 2009 PHK12NQ10T N-channel TrenchMOS standard level FET © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 24 November 2009 Document identifier: PHK12NQ10T_2 All rights reserved. ...