PHK12NQ10T NXP Semiconductors, PHK12NQ10T Datasheet - Page 9

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PHK12NQ10T

Manufacturer Part Number
PHK12NQ10T
Description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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NXP Semiconductors
7. Package outline
Fig 14. Package outline SOT96-1 (SO8)
PHK12NQ10T_2
Product data sheet
SO8: plastic small outline package; 8 leads; body width 3.9 mm
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
inches
UNIT
mm
VERSION
OUTLINE
SOT96-1
0.069
max.
1.75
A
0.010
0.004
0.25
0.10
A
1
0.057
0.049
1.45
1.25
A
076E03
2
IEC
1
8
Z
pin 1 index
0.25
0.01
y
A
3
e
0.019
0.014
0.49
0.36
b
p
D
0.0100
0.0075
0.25
0.19
MS-012
JEDEC
c
b
Rev. 02 — 24 November 2009
REFERENCES
p
0.20
0.19
D
5.0
4.8
5
4
0
(1)
w
0.16
0.15
E
4.0
3.8
(2)
M
JEITA
scale
1.27
0.05
2.5
c
e
A
0.244
0.228
2
H
6.2
5.8
A
E
1
0.041
1.05
5 mm
L
N-channel TrenchMOS standard level FET
H
0.039
0.016
E
E
detail X
1.0
0.4
L
p
0.028
0.024
L
L
0.7
0.6
Q
p
Q
PROJECTION
(A )
EUROPEAN
0.25
0.01
3
A
PHK12NQ10T
v
θ
0.25
0.01
A
w
v
X
M
0.004
A
0.1
© NXP B.V. 2009. All rights reserved.
y
ISSUE DATE
99-12-27
03-02-18
0.028
0.012
Z
0.7
0.3
(1)
SOT96-1
8
0
θ
o
o
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