PHP18NQ10T NXP Semiconductors, PHP18NQ10T Datasheet - Page 5

• Manufacturer Part Number: PHP18NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PHP18NQ10T
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction to mounting
base
thermal resistance from junction to ambient
Z
(K/W)
th(j-mb)
10
10
10
−1
−2
1
10
−6
All information provided in this document is subject to legal disclaimers.
D = 0.5
0.2
0.1
0.05
0.02
single pulse
10
Rev. 02 — 16 December 2010
−5
10
−4
10
−3
Conditions
in free air
P
10
−2
t
p
T
10
N-channel TrenchMOS standard level FET
003aae632
−1
δ =
t
p
(s)
T
t
t
p
1
Min
-
-
PHP18NQ10T
Typ
-
60
© NXP B.V. 2010. All rights reserved.
-
Max
1.9
Unit
K/W
K/W
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