PHP18NQ10T NXP Semiconductors, PHP18NQ10T Datasheet - Page 7

• Manufacturer Part Number: PHP18NQ10T
• Description: Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PHP18NQ10T
Product data sheet
Fig 6.
Fig 8.
Fig 10. Normalized drain-source on-state resistance
R
DS(on)
(Ω)
(A)
(A)
I
I
D
D
2.9
2.1
1.3
0.5
20
16
12
20
16
12
8
4
0
8
4
0
−60
function of drain-source voltage; typical values
function of gate-source voltage; typical values
factor as a function of junction temperature
T
Output characteristics: drain current as a
V
Transfer characteristics: drain current as a
0
0
j
DS
= 25 °C
> I
D
0.4
2
x R
T
DSon
j
= 175 °C
20
0.8
V
4
GS
= 10 V
T
j
1.2
= 25 °C
6
100
4.6 V
8 V
1.6
T
All information provided in this document is subject to legal disclaimers.
8
j
003aae633
003aae635
003aae637
(°C)
V
V
DS
GS
5.4 V
5.2 V
4.8 V
4.4 V
6 V
5 V
(V)
(V)
Rev. 02 — 16 December 2010
180
2.0
10
Fig 7.
Fig 9.
Fig 11. Gate-source threshold voltage as a function of
R
V
(S)
g
DS(on)
GS(th)
(Ω)
fs
(V)
0.20
0.16
0.12
0.08
0.04
4.5
3.5
2.5
1.5
0.5
14
12
10
0
8
6
4
2
0
−60
of drain current; typical values
drain current; typical values
junction temperature
T
Drain-source on-state resistance as a function
V
Forward transconductance as a function of
I
0
0
D
j
DS
4.6
N-channel TrenchMOS standard level FET
= 25 °C
= 1 mA; V
4.8
> I
D
5
4
4
x R
5.2
DSon
DS
20
5.4
= V
8
8
maximum
GS
minimum
PHP18NQ10T
typical
12
12
100
T
T
V
j
j
= 25 °C
= 175 °C
GS
6
© NXP B.V. 2010. All rights reserved.
T
16
16
j
003aae634
003aae636
003aae638
(V) = 10
(°C)
I
I
D
D
(A)
(A)
8
180
20
20
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