PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 12

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology

PMDPB65UP

Manufacturer Part Number
PMDPB65UP
Description
Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
Manufacturer
NXP Semiconductors
Datasheet
NXP Semiconductors
10. Revision history
Table 8.
PMDPB65UP
Product data sheet
Document ID
PMDPB65UP v.2
Modifications:
PMDPB65UP v.1
Revision history
20110308
20110118
Release date
2 “Pinning
information”: corrected.
All information provided in this document is subject to legal disclaimers.
Data sheet status
Product data sheet
Product data sheet
Rev. 2 — 8 March 2011
20 V, 3.5 A dual P-channel Trench MOSFET
Change notice
-
-
PMDPB65UP
Supersedes
PMDPB65UP v.1
-
© NXP B.V. 2011. All rights reserved.
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