PMDPB65UP NXP Semiconductors, PMDPB65UP Datasheet - Page 4

• Manufacturer Part Number: PMDPB65UP
• Description: Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a small and leadless ultra thin SOT1118 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
6. Thermal characteristics
Table 6.
[1]
[2]
PMDPB65UP
Product data sheet
Symbol
Per transistor
R
R
Fig 3.
th(j-a)
th(j-sp)
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm
−10
−10
(A)
−10
I
D
−10
−1
−1
−2
−10
2
voltage
I
(1) t
(2) t
(3) t
(4) DC; T
(5) t
(6) DC; T
Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
DM
−1
Thermal characteristics
= single pulse
p
p
p
p
= 100 μs
= 1 ms
= 10 ms
= 100 ms
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to solder
point
sp
amb
= 25 °C
= 25 °C; drain mounting pad 6 cm
Limit R
DSon
= V
DS
/I
D
Conditions
in free air
All information provided in this document is subject to legal disclaimers.
−1
Rev. 2 — 8 March 2011
2
20 V, 3.5 A dual P-channel Trench MOSFET
−10
[1]
[2]
2
.
(1)
(2)
(3)
(4)
(5)
(6)
Min
-
-
-
V
PMDPB65UP
DS
(V)
Typ
-
-
-
© NXP B.V. 2011. All rights reserved.
017aaa066
Max
240
100
15
−10
2
Unit
K/W
K/W
K/W
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