PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 14

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
8. Test information
PMDT290UCE
Product data sheet
Fig 29. Gate charge waveform definitions
Fig 31. Duty cycle definition
V
V
V
V
GS(pl)
DS
GS(th)
GS
8.1 Quality information
Q
GS1
I
Q
D
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
GS
Q
GS2
Q
G(tot)
Q
GD
All information provided in this document is subject to legal disclaimers.
017aaa137
P
Rev. 1 — 6 October 2011
t
1
t
2
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
duty cycle δ =
Fig 30. TR2; Source current as a function of
(A)
I
S
006aaa812
-0.5
-0.4
-0.3
-0.2
-0.1
0.0
0.0
source-drain voltage; typical values
V
(1) T
(2) T
GS
t
t
t
1
2
= 0 V
amb
amb
-0.2
= 150 °C
= 25 °C
-0.4
PMDT290UCE
(1)
-0.6
-0.8
© NXP B.V. 2011. All rights reserved.
(2)
017aaa372
V
SD
(V)
-1.0
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