PMDT290UCE NXP Semiconductors, PMDT290UCE Datasheet - Page 4

• Manufacturer Part Number: PMDT290UCE
• Description: Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMDT290UCE
Product data sheet
Fig 3.
Fig 4.
–10
–10
(A)
(A)
I
I
10
10
D
D
–10
10
–1
–1
–2
–1
–2
–10
1
10
function of drain-source voltage
function of drain-source voltage
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area TR1 (N-channel); junction to ambient; continuous and peak drain currents as a
I
(1) t
(2) t
(3) DC; T
(4) t
(5) DC; T
Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a
DM
DM
–1
–1
= single pulse
= single pulse
p
p
p
p
p
p
= 1 ms
= 10 ms
= 100 ms
= 1 ms
= 10 ms
= 100 ms
sp
amb
sp
amb
= 25 °C
= 25 °C
= 25 °C; drain mounting pad 1 cm
= 25 °C; drain mounting pad 1 cm
Limit R
Limit R
DSon
DSon
= V
= V
All information provided in this document is subject to legal disclaimers.
DS
DS
–1
1
/I
/I
D
D
Rev. 1 — 6 October 2011
2
2
20 / 20 V, 800 / 550 mA N/P-channel Trench MOSFET
–10
10
(1)
(2)
(3)
(4)
(5)
PMDT290UCE
(1)
(2)
(3)
(4)
(5)
V
V
DS
DS
(V)
(V)
© NXP B.V. 2011. All rights reserved.
017aaa361
017aaa373
–10
10
2
2
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