PMF290XN NXP Semiconductors, PMF290XN Datasheet

Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology

PMF290XN

Manufacturer Part Number
PMF290XN
Description
Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
Manufacturer
NXP Semiconductors
Datasheet

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Part Number:
PMF290XN
Manufacturer:
NXP
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42 000
Part Number:
PMF290XN115
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NXP Semiconductors
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PMF290XNЈ¬115
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1. Product profile
2. Pinning information
Table 1:
Pin
1
2
3
Pinning - SOT323 (SC-70), simplified outline and symbol
Description
gate (g)
source (s)
drain (d)
M3D102
1.1 Description
1.2 Features
1.3 Applications
1.4 Quick reference data
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™ technology.
PMF290XN
N-channel TrenchMOS™ extremely low level FET
Rev. 01 — 27 February 2004
Surface mounted package
Low on-state resistance
Driver circuits
V
P
DS
tot
0.56 W
20 V
Simplified outline
Top view
SOT323 (SC-70)
1
3
MBC870
2
Symbol
Footprint 40% smaller than SOT23
Low threshold voltage.
Switching in portable appliances.
I
R
D
DSon
1 A
350 m .
MBB076
g
d
s
Product data

Related parts for PMF290XN

PMF290XN Summary of contents

Page 1

... Pinning information Table 1: Pinning - SOT323 (SC-70), simplified outline and symbol Pin Description 1 gate (g) 2 source (s) 3 drain (d) PMF290XN N-channel TrenchMOS™ extremely low level FET Rev. 01 — 27 February 2004 Surface mounted package Low on-state resistance Driver circuits 0.56 W tot Simplifi ...

Page 2

... 4 100 4 pulsed Figure pulsed Rev. 01 — 27 February 2004 PMF290XN Min - = Figure 2 and 3 - Figure Figure © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 3

... N-channel TrenchMOS™ extremely low level FET 03aa17 120 I der (%) 150 200 der Fig 2. Normalized continuous drain current 4 Rev. 01 — 27 February 2004 PMF290XN 100 150 I D ------------------- = 100 function of solder point temperature ...

Page 4

... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 12767 Product data N-channel TrenchMOS™ extremely low level FET Conditions Figure Rev. 01 — 27 February 2004 PMF290XN Min Typ Max Unit - - 220 K/W 03an27 t p ...

Page 5

... 4 Figure MHz Figure 4 0 Figure Rev. 01 — 27 February 2004 PMF290XN Min Typ Max Unit 0.5 1 1 100 - 10 100 ...

Page 6

... 1 (V) Fig 6. Transfer characteristics: drain current as a 03am97 3 V 3.5 V 4.5 V 1 (A) Fig 8. Normalized drain-source on-state resistance Rev. 01 — 27 February 2004 PMF290XN 2 > DSon ( 150 C 1 and 150 C; V ...

Page 7

... Fig 10. Sub-threshold drain current as a function (pF Rev. 01 — 27 February 2004 PMF290XN min typ max 0 0.4 0.8 1 gate-source voltage. 03an00 C iss C oss C rss (V) © Koninklijke Philips Electronics N.V. 2004. All rights reserved. ...

Page 8

... 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 27 February 2004 PMF290XN 03an01 0.2 0.4 0 (nC © Koninklijke Philips Electronics N.V. 2004. All rights reserved. 0 ...

Page 9

... scale 2.2 1.35 2.2 1.3 0.65 1.8 1.15 2.0 REFERENCES JEDEC EIAJ SC-70 Rev. 01 — 27 February 2004 PMF290XN detail 0.45 0.23 0.2 0.2 0.15 0.13 EUROPEAN PROJECTION © Koninklijke Philips Electronics N.V. 2004. All rights reserved. SOT323 ISSUE DATE ...

Page 10

... Product data (9397 750 12767). 9397 750 12767 Product data N-channel TrenchMOS™ extremely low level FET 2.65 0.75 1.325 1. 0.50 0.60 (3x) 1.90 (3x) 1 0.55 (3x) MSA429 2.40 Rev. 01 — 27 February 2004 PMF290XN solder lands solder resist occupied area solder paste © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 11

... Trademarks TrenchMOS — trademark of Koninklijke Philips Electronics N.V. Rev. 01 — 27 February 2004 Rev. 01 — 27 February 2004 PMF290XN PMF290XN Fax: + 24825 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. © Koninklijke Philips Electronics N.V. 2004. All rights reserved ...

Page 12

... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 27 February 2004 Document order number: 9397 750 12767 PMF290XN N-channel TrenchMOS™ extremely low level FET ...

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