PMF290XN NXP Semiconductors, PMF290XN Datasheet - Page 3

• Manufacturer Part Number: PMF290XN
• Description: Extremely low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12767
Product data
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
(A)
I D
T
P
P der
10 -1
10 -2
(%)
sp
120
der
10
80
40
1
0
= 25 C; I
function of solder point temperature.
10 -1
0
=
---------------------- -
P
tot 25 C
P
DM
tot
50
is single pulse; V
100%
Limit R DSon = V DS / I D
100
GS
= 4.5 V
150
T sp ( C)
1
03aa17
200
Rev. 01 — 27 February 2004
DC
Fig 2. Normalized continuous drain current as a
N-channel TrenchMOS™ extremely low level FET
I
I der
(%)
120
der
80
40
0
function of solder point temperature.
=
0
-------------------
I
D 25 C
10
I
D
50
100%
t p = 10 s
100 s
1 ms
10 ms
100 ms
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
100
V DS (V)
PMF290XN
150
T sp ( C)
03an13
03aa25
10 2
200
3 of 12