PMGD400UN NXP Semiconductors, PMGD400UN Datasheet - Page 5

• Manufacturer Part Number: PMGD400UN
• Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
6. Characteristics
Table 5:
T
9397 750 12759
Product data
Symbol Parameter
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
j
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
g(tot)
gs
gd
= 25 C unless otherwise specified.
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
gate-source leakage current
drain-source on-state resistance
total gate charge
gate-source charge
gate-drain (Miller) charge
input capacitance
output capacitance
reverse transfer capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain (diode forward) voltage I
Characteristics
Conditions
I
I
V
V
V
V
V
I
Figure 13
V
Figure 11
V
V
D
D
D
S
DS
GS
GS
GS
GS
GS
DD
GS
T
T
T
T
T
T
T
T
T
= 0.3 A; V
= 1 A; V
= 0.25 mA; V
= 1 A; V
Rev. 01 — 3 March 2004
j
j
j
j
j
j
j
j
j
= 30 V; V
= 8 V; V
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 0 V; V
= 15 V; R
= 4.5 V; R
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 25 C
= 150 C
DD
GS
GS
DS
D
D
D
= 15 V; V
GS
DS
L
G
= 0 V
= 0.2 A;
= 0.1 A;
= 0.075 A;
= 15 ;
= 0 V;
DS
= 25 V; f = 1 MHz;
= 6
Dual N-channel TrenchMOS™ ultra low level FET
= 0 V
= 0 V
= V
Figure 12
GS
GS
Figure 7
Figure 7
;
Figure 9
= 4.5 V;
Figure 7
and
and
and
8
8
8
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMGD400UN
Min
30
27
0.45
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
0.7
-
-
-
-
10
400
660
480
580
0.89
0.1
0.2
43
7.7
4.8
4
7.5
18
4.5
0.76
Max
-
-
1
-
1.2
1
100
100
480
816
580
830
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
nA
m
m
m
m
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
5 of 12
A
A