PMGD400UN NXP Semiconductors, PMGD400UN Datasheet - Page 8

• Manufacturer Part Number: PMGD400UN
• Description: Dual ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 12759
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
0.8
0.6
0.4
0.2
= 25 C and 150 C; V
1
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.2
150 C
0.4
GS
= 0 V
0.6
T j = 25 C
0.8
V SD (V)
03an97
1
Rev. 01 — 3 March 2004
Fig 13. Gate-source voltage as a function of gate
Dual N-channel TrenchMOS™ ultra low level FET
I
V GS
D
(V)
= 1 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 1 A
T j = 25 C
V DD = 15 V
DD
0.2
= 15 V
0.4
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
PMGD400UN
0.6
0.8
Q G (nC)
03an99
1
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