PMK35EP NXP Semiconductors, PMK35EP Datasheet
PMK35EP
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PMK35EP Summary of contents
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... PMK35EP P-channel TrenchMOS extremely low level FET Rev. 02 — 29 April 2010 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
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... Figure °C; see Figure °C sp ≤ 10 µs; pulsed ° All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP Graphic symbol 001aaa025 Version SOT96-1 Min Typ Max - - - -30 - ...
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... P-channel TrenchMOS extremely low level FET 120 P der (%) 100 Normalized total power dissipation as a function of solder point temperature = 10 μ 100 ms −10 V (V) DS Min Typ - - PMK35EP 003aab948 150 200 T (°C) sp 003aab603 −10 2 Max Unit 18 K/W © NXP B.V. 2010. All rights reserved ...
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... Figure 10; see Figure - °C; see Figure 11; see Figure 12 j All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP 003aab605 t p δ (s) p Min Typ Max ...
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... I D (A) −20 −10 = 150 ° −1 − > DSon Transfer characteristics: drain current as a function of gate-source voltage; typical values PMK35EP Max Unit - -1.2 V 003aab608 25 °C −3 −4 V (V) GS © NXP B.V. 2010. All rights reserved. ...
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... T (° Fig 10. Drain-source on-state resistance as a function of drain current; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP 003aab612 min. typ. max. −1 −2 − ° 003aab607 (V) = − ...
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... I S (A) −18 C iss −12 C oss C rss −10 − (V) DS Fig 14. Source current as a function of source-drain All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP GS(pl) V GS(th GS1 GS2 G(tot) = 150 °C 25 ° ...
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... P-channel TrenchMOS extremely low level FET θ detail 6.2 1.0 0.7 1.05 0.25 0.25 5.8 0.4 0.6 0.039 0.028 0.041 0.01 0.01 0.016 0.024 EUROPEAN PROJECTION PMK35EP SOT96 (1) θ 0.7 0 0.028 0.004 0.012 ISSUE DATE 99-12-27 03-02-18 © NXP B.V. 2010. All rights reserved ...
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... Product data sheet P-channel TrenchMOS extremely low level FET Data sheet status Change notice Product data sheet - Product data sheet - All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP Supersedes PMK35EP_1 - © NXP B.V. 2010. All rights reserved ...
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... Export control — This document as well as the item(s) described herein may be subject to export control regulations. Export might require a prior authorization from national authorities. All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP © NXP B.V. 2010. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 29 April 2010 PMK35EP Trademarks © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com PMK35EP All rights reserved. Date of release: 29 April 2010 Document identifier: PMK35EP ...