PMK35EP NXP Semiconductors, PMK35EP Datasheet - Page 7

• Manufacturer Part Number: PMK35EP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMK35EP
Product data sheet
Fig 11. Gate-source voltage as a function of gate
Fig 13. Input, output and reverse transfer capacitances
V
(pF)
(V)
C
GS
−7.5
−2.5
−10
10
10
10
−5
−10
0
4
3
2
charge; typical values
as a function of drain-source voltage; typical
values
I
V
0
D
V
I
T
−1
GS
D
= -9.2 A; V
j
DS
= 25 °C
= −9.2 A
= 0 V; f = 1 MHz
= −5 V
12.5
DS
−1
= -15 V; T
25
j
−10
= 25 °C
37.5
V
All information provided in this document is subject to legal disclaimers.
DS
Q
003aab611
003aab610
G
C
C
C
(V)
oss
rss
(nC)
iss
−10
50
Rev. 02 — 29 April 2010
2
Fig 12. Gate charge waveform definitions
Fig 14. Source current as a function of source-drain
(A)
I
P-channel TrenchMOS extremely low level FET
S
−24
−18
−12
−6
0
voltage; typical values
V
0
V
GS
V
V
V
GS(pl)
DS
GS(th)
GS
= 0 V
T
j
−0.4
= 150 °C
Q
GS1
I
Q
D
GS
Q
GS2
−0.8
Q
G(tot)
25 °C
Q
GD
PMK35EP
−1.2
© NXP B.V. 2010. All rights reserved.
V
003aaa508
003aab609
SD
(V)
−1.6
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