PMN34UN NXP Semiconductors, PMN34UN Datasheet
![Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology](/photos/41/52/415250/sot457_3d_sml.gif)
PMN34UN
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PMN34UN Summary of contents
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... TrenchMOS™ ultra low level FET Rev. 01 — 26 February 2003 M3D302 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology. Product availability: PMN34UN in SOT457 (TSOP6). 2. Features TrenchMOS™ technology Very fast switching Low threshold voltage Surface mount package. 3. Applications ...
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... 4.5 V; Figure 2 and 4.5 V; Figure pulsed Figure Figure Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET Typ Max Unit - 4 1. 150 ...
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... ------------------ - der I Fig 2. Normalized continuous drain current as a function of solder point temperature Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET 03aa25 50 100 150 200 100 03al44 100 ...
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... Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration. 9397 750 10979 Product data Conditions Figure Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET Min Typ Max Unit - - 70 K/W 03al43 ...
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... Figure MHz; Figure 4 1 Figure Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET Min Typ Max Unit 0.45 0 0.01 1 100 ...
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... --------------------------- - R DSon 25 C Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature. Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET 03al47 V DS > DSon 150 C 0 (V) > DSon ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET 03aj64 min typ 0.2 0.4 0 03al49 C iss C oss C rss 10 2 © ...
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... 1 ( Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET 03al50 (nC © Koninklijke Philips Electronics N.V. 2003. All rights reserved. ...
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... 3.1 1.7 3.0 0.6 0.33 0.95 2.7 1.3 2.5 0.2 0.23 REFERENCES JEDEC EIAJ SC-74 Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET detail 0.2 0.2 0.1 EUROPEAN ISSUE DATE PROJECTION 97-02-28 01-05-04 © Koninklijke Philips Electronics N.V. 2003. All rights reserved. SOT457 ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20030226 - Product data (9397 750 10979) 9397 750 10979 Product data Rev. 01 — 26 February 2003 PMN34UN TrenchMOS™ ultra low level FET © Koninklijke Philips Electronics N.V. 2003. All rights reserved ...
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... Rev. 01 — 26 February 2003 Rev. 01 — 26 February 2003 PMN34UN PMN34UN TrenchMOS™ ultra low level FET TrenchMOS™ ultra low level FET (CPCN). Philips Semiconductors ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 26 February 2003 Document order number: 9397 750 10979 PMN34UN TrenchMOS™ ultra low level FET ...