PMN34UN NXP Semiconductors, PMN34UN Datasheet - Page 8

• Manufacturer Part Number: PMN34UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 10979
Product data
Fig 12. Source (diode forward) current as a function of
T
(A)
j
I S
= 25 C and 150 C; V
20
15
10
5
0
source-drain (diode forward) voltage; typical
values.
0
V GS = 0 V
0.5
150 C
GS
= 0 V
T j = 25 C
1
V SD (V)
03al48
Rev. 01 — 26 February 2003
1.5
Fig 13. Gate-source voltage as a function of gate
I
V GS
D
(V)
= 5 A; V
5
4
3
2
1
0
charge; typical values.
0
I D = 5 A
T j = 25 C
V DD = 15 V
DD
= 15 V
TrenchMOS™ ultra low level FET
4
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
8
PMN34UN
Q G (nC)
03al50
12
8 of 12