PMN34UP NXP Semiconductors, PMN34UP Datasheet - Page 6

• Manufacturer Part Number: PMN34UP
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN34UP
Product data sheet
Fig 6.
Fig 8.
R
DSon
(Ω)
(A)
I
0.10
0.08
0.06
0.04
0.02
0.00
D
–16
–12
–8
–4
0
function of drain-source voltage; typical values
of drain current; typical values
T
Output characteristics: drain current as a
T
(1) V
(2) V
(3) V
(4) V
(5) V
Drain-source on-state resistance as a function
0
0
j
j
= 25 °C
= 25 °C
(1)
GS
GS
GS
GS
GS
–1
= -1.5 V
= -1.8 V
= -2.0 V
= -2.5 V
= -4.5 V
–4
–4.5 V
–2.5 V
–2 V
–2
–8
–3
(2)
(3)
(4)
(5)
V
GS
–12
–1.5 V
= –1.8 V
–4
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I
V
D
DS
(A)
(V)
–16
–5
Rev. 1 — 9 May 2011
Fig 7.
Fig 9.
R
–10
–10
–10
–10
DSon
(Ω)
(A)
I
D
0.20
0.15
0.10
0.05
0.00
–3
–4
–5
–6
–0.2
0.0
gate-source voltage
of gate-source voltage; typical values
T
(1) minimum values
(2) typical values
(3) maximum values
Sub-threshold drain current as a function of
I
(1) T
(2) T
Drain-source on-state resistance as a function
D
j
= 25 °C; V
= -2.4 A
j
j
(1)
= 150 °C
= 25 °C
–1.0
20 V, 5 A P-channel Trench MOSFET
–0.4
DS
–2.0
= -3 V
(2)
–0.6
–3.0
PMN34UP
–0.8
(3)
–4.0
© NXP B.V. 2011. All rights reserved.
(1)
(2)
V
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V
GS
GS
(V)
(V)
–1.0
–5.0
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