PMN34UP NXP Semiconductors, PMN34UP Datasheet - Page 8

• Manufacturer Part Number: PMN34UP
• Description: P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMN34UP
Product data sheet
Fig 14. Gate-source voltage as a function of gate
Fig 16. Source current as a function of source-drain voltage; typical values
V
(V)
–4.5
GS
–3.0
–1.5
0.0
charge; typical values
I
V
(1) T
(2) T
0
D
GS
= -2.4 A; V
= 0 V
j
j
= 150 °C
= 25 °C
4
DS
= -10 V; T
8
amb
(A)
I
S
–16
–12
–8
–4
–0
12
= 25 °C
–0.2
All information provided in this document is subject to legal disclaimers.
Q
017aaa150
G
(nC)
–0.4
16
Rev. 1 — 9 May 2011
–0.6
(1)
Fig 15. Gate charge waveform definitions
–0.8
(2)
–1.0
V
V
V
V
GS(pl)
017aaa151
DS
GS(th)
GS
V
SD
(V)
–1.2
20 V, 5 A P-channel Trench MOSFET
Q
GS1
I
Q
D
GS
Q
GS2
Q
G(tot)
Q
GD
PMN34UP
© NXP B.V. 2011. All rights reserved.
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