PMR400UN NXP Semiconductors, PMR400UN Datasheet - Page 5

• Manufacturer Part Number: PMR400UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
7. Characteristics
Table 7.
PMR400UN
Product data sheet
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
Q
Q
Q
C
C
C
t
t
t
t
Source-drain diode
V
DSS
GSS
d(on)
r
d(off)
f
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
G(tot)
GS
GD
Characteristics
Parameter
drain-source
breakdown voltage
gate-source threshold
voltage
drain leakage current
gate leakage current
drain-source on-state
resistance
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
reverse transfer
capacitance
turn-on delay time
rise time
turn-off delay time
fall time
source-drain voltage
Conditions
I
I
I
I
I
V
V
V
V
V
V
V
V
I
T
V
T
V
R
I
All information provided in this document is subject to legal disclaimers.
D
D
D
D
D
D
S
j
j
DS
DS
GS
GS
GS
GS
GS
GS
DS
DS
G(ext)
= 25 °C
= 25 °C
= 0.3 A; V
= 1 µA; V
= 1 µA; V
= 0.25 mA; V
= 0.25 mA; V
= 0.25 mA; V
= 1 A; V
= 30 V; V
= 30 V; V
= 25 V; V
= 15 V; R
= 8 V; V
= -8 V; V
= 4.5 V; I
= 4.5 V; I
= 2.5 V; I
= 1.8 V; I
= 6 Ω; T
Rev. 2 — 2 February 2012
DS
GS
GS
GS
DS
DS
D
D
D
D
= 15 V; V
GS
GS
GS
L
= 0 V; T
= 0 V; T
j
= 0.2 A; T
= 0.2 A; T
= 0.1 A; T
= 0.075 A; T
= 15 Ω; V
= 0 V; T
DS
DS
DS
= 0 V; T
= 25 °C
= 0 V; T
= 0 V; T
= 0 V; T
= 0 V; f = 1 MHz;
= V
= V
= V
GS
GS
GS
j
j
GS
j
j
= 25 °C
= -55 °C
j
= 25 °C
; T
; T
; T
= 25 °C
j
j
GS
= 25 °C
j
j
j
= 25 °C
= 150 °C
= 4.5 V;
= 25 °C
= 150 °C
= 25 °C
j
j
j
j
= 4.5 V;
= 25 °C
= 150 °C
= -55 °C
= 25 °C
N-channel TrenchMOS ultra low level FET
Min
30
27
0.45
0.25
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
PMR400UN
Typ
-
-
0.7
-
-
-
-
10
10
400
660
480
580
0.89
0.1
0.2
43
7.7
4.8
4
7.5
18
4.5
0.76
© NXP B.V. 2012. All rights reserved.
-
Max
-
-
1
-
1.2
1
100
100
100
480
816
580
830
-
-
-
-
-
-
-
-
-
1.2
Unit
V
V
V
V
V
µA
µA
nA
nA
mΩ
mΩ
mΩ
mΩ
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
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