PMR400UN NXP Semiconductors, PMR400UN Datasheet - Page 7

• Manufacturer Part Number: PMR400UN
• Description: Ultra low level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMR400UN
Product data sheet
Fig 9.
Fig 11. Input, output and reverse transfer capacitances
(pF)
V
C
GS(th)
(V)
10
1.2
0.9
0.6
0.3
10
0
2
1
10
−60
junction temperature
as a function of drain-source voltage; typical
values
I
Gate-source threshold voltage as a function of
D
-1
= 0.25 mA; V
0
1
DS
= V
60
GS
max
min
typ
10
120
V
All information provided in this document is subject to legal disclaimers.
DS
T
j
C
C
C
(V)
03an98
(°C)
oss
iss
rss
03aj65
10
180
Rev. 2 — 2 February 2012
2
Fig 10. Sub-threshold drain current as a function of
Fig 12. Source current as a function of source-drain
(A)
(A)
I
I
10
10
10
10
D
S
0.8
0.6
0.4
0.2
−3
−4
−5
−6
1
0
gate-source voltage
voltage; typical values
0
0
V
N-channel TrenchMOS ultra low level FET
GS
= 0 V
0.2
0.4
0.4
min
150 °C
0.6
typ
PMR400UN
0.8
V
T
© NXP B.V. 2012. All rights reserved.
0.8
GS
j
max
= 25 °C
V
(V)
SD
03am43
03an97
(V)
1.2
1
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