PMV31XN NXP Semiconductors, PMV31XN Datasheet - Page 2

• Manufacturer Part Number: PMV31XN
• Description: N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
2. Pinning information
Table 2.
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMV31XN
Product data sheet
Pin
1
2
3
Type number
PMV31XN
Type number
PMV31XN
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
D
DM
S
stg
j
DS
DGR
GS
tot
% = placeholder for manufacturing site code
Symbol Description
G
S
D
Pinning information
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
gate
source
drain
TO-236AB
Package
Name
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 30 November 2011
Conditions
T
T
T
T
see
T
Figure 3
T
T
j
j
sp
sp
sp
sp
sp
Simplified outline
≥ 25 °C; T
≥ 25 °C; T
= 100 °C; V
= 25 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
Figure 3
SOT23 (TO-236AB)
1
Marking code
%M4
j
j
≤ 150 °C
≤ 150 °C; R
GS
GS
Figure 1
= 4.5 V; see
3
= 4.5 V; see
p
2
≤ 10 µs; see
GS
[1]
= 20 kΩ
Figure
Figure 2
Graphic symbol
2;
N-channel TrenchMOS FET
G
Min
-
-
-12
-
-
-
-
-55
-55
-
017aaa253
PMV31XN
© NXP B.V. 2011. All rights reserved.
D
S
SOT23
150
150
Version
Max
20
20
12
3.75
5.9
23.7
2
1.7
Unit
V
V
V
A
A
A
W
°C
°C
A
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