PMV45EN NXP Semiconductors, PMV45EN Datasheet - Page 2

• Manufacturer Part Number: PMV45EN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
3. Ordering information
Table 3.
4. Marking
Table 4.
[1]
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
PMV45EN
Product data sheet
Type number
PMV45EN
Type number
PMV45EN
Symbol
V
V
V
I
I
P
T
T
Source-drain diode
I
I
D
DM
S
SM
stg
j
DS
DGR
GS
tot
% = placeholder for manufacturing site code
Ordering information
Marking codes
Limiting values
Parameter
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
source current
peak source current
TO-236AB
Package
Name
Description
plastic surface-mounted package; 3 leads
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 7 November 2011
Conditions
T
T
T
T
see
T
Figure 3
T
T
T
j
j
sp
sp
sp
sp
sp
sp
≥ 25 °C; T
≥ 25 °C; T
= 100 °C; V
= 25 °C; V
= 25 °C; pulsed; t
= 25 °C; see
= 25 °C
= 25 °C; pulsed; t
Figure 3
Marking code
%4N
j
j
≤ 150 °C
≤ 150 °C; R
GS
GS
Figure 2
= 10 V; see
= 10 V; see
p
p
≤ 10 µs; see
≤ 10 µs
GS
[1]
= 20 kΩ
N-channel TrenchMOS logic level FET
Figure
Figure 1
1;
Min
-
-
-20
-
-
-
-
-55
-55
-
-
PMV45EN
© NXP B.V. 2011. All rights reserved.
SOT23
150
150
Version
Max
30
30
20
3.4
5.4
21.6
2
1.7
6.9
Unit
V
V
V
A
A
A
W
°C
°C
A
A
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