PMV45EN NXP Semiconductors, PMV45EN Datasheet - Page 7

• Manufacturer Part Number: PMV45EN
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PMV45EN
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R DSon
(m Ω )
V GS
(V)
200
150
100
50
10
0
8
6
4
2
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
V DD = 15 V
T j = 25 ° C
I D = 3 A
T j = 25 ° C
2
1
4
6
2
V GS = 2.7 V
All information provided in this document is subject to legal disclaimers.
I D (A)
8
Q G (nC)
03ak75
2.9 V
3.1 V
4.5 V
03al04
10 V
Rev. 2 — 7 November 2011
10
3
Fig 10. Normalized drain-source on-state resistance
Fig 12. Source current as a function of source-drain
(A)
a
I S
1.8
1.2
0.6
3
2
1
0
0
−60
factor as a function of junction temperature
voltage; typical value
0
V GS = 0 V
N-channel TrenchMOS logic level FET
0.3
0
150 ° C
0.6
60
T j = 25 ° C
PMV45EN
120
0.9
© NXP B.V. 2011. All rights reserved.
V SD (V)
T
j
(°C)
03ak73
03al00
180
1.2
7 of 13