PMV65XP NXP Semiconductors, PMV65XP Datasheet - Page 8

• Manufacturer Part Number: PMV65XP
• Description: Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

Philips Semiconductors
9397 750 13993
Product data sheet
Fig 12. Source (diode forward) current as a function of
(A)
-I
S
10
8
6
4
2
0
T
source-drain (diode forward) voltage; typical
values.
0
j
= 25 C and 150 C; V
0.3
150 C
0.6
GS
= 0 V
0.9
T
j
= 25 C
-V
03ar50
SD
(V)
Rev. 01 — 28 September 2004
1.2
Fig 13. Input, output and reverse transfer capacitances
P-channel TrenchMOS™ extremely low level FET
(pF)
C
10
10
10
3
2
10
V
as a function of drain-source voltage; typical
values.
GS
-1
= 0 V; f = 1 MHz
1
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
10
PMV65XP
-V
DS
03ar49
C
C
C
(V)
oss
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iss
10
2
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