PSMN005-75B NXP Semiconductors, PSMN005-75B Datasheet - Page 7

• Manufacturer Part Number: PSMN005-75B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN005-75B_1
Product data sheet
Fig 5.
Fig 7.
(A)
I
10
10
10
10
10
10
(A)
D
I
100
D
−1
−2
−3
−4
−5
−6
75
50
25
0
gate-source voltage
function of gate-source voltage; typical values
Sub-threshold drain current as a function of
Transfer characteristics: drain current as a
0
0
2
2
min
T
j
= 175 °C
typ
4
4
max
V
V
GS
25 °C
GS
(V)
(V)
03ah94
03aa35
Rev. 01 — 16 November 2009
6
6
N-channel TrenchMOS SiliconMAX standard level FET
Fig 6.
Fig 8.
V
GS(th)
(V)
(A)
I
300
200
100
D
5
4
3
2
1
0
0
−60
function of drain-source voltage; typical values
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
V
GS
(V) =
7.5
0.5
20
10
0
8
PSMN005-75B
60
1
max
min
typ
7
120
1.5
© NXP B.V. 2009. All rights reserved.
V
T
DS
j
03ah92
(°C)
03aa32
(V)
6.5
5.5
4.5
6
5
180
2
7 of 13