PSMN005-75B NXP Semiconductors, PSMN005-75B Datasheet - Page 8

• Manufacturer Part Number: PSMN005-75B
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN005-75B_1
Product data sheet
Fig 9.
Fig 11. Gate-source voltage as a function of gate
R
(Ω)
0.015
0.005
V
DSon
(V)
0.01
GS
10
8
6
4
2
0
0
of drain current; typical values
charge; typical values
Drain-source on-state resistance as a function
0
0
I
V
T
V
D
j
DD
GS
= 75 A
= 25 °C
= 60 V
(V) =
5
50
100
5.5
100
200
6
150
7 8
T
I
D
j
Q
= 25 °C
(A)
G
10
03ah93
03ah98
(nC)
6.5
20
Rev. 01 — 16 November 2009
300
200
N-channel TrenchMOS SiliconMAX standard level FET
Fig 10. Normalized drain-source on-state resistance
Fig 12. Input, output and reverse transfer capacitances
(pF)
a
10
10
10
10
C
2.5
1.5
0.5
2
1
0
5
4
3
2
10
−60
factor as a function of junction temperature
as a function of drain-source voltage; typical
values
-1
0
1
PSMN005-75B
60
10
120
© NXP B.V. 2009. All rights reserved.
V
T
DS
j
03ah97
(°C)
(V)
03aj03
C
C
C
oss
iss
rss
10
180
2
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