PSMN012-80PS NXP Semiconductors, PSMN012-80PS Datasheet - Page 4

PSMN012-80PS

Manufacturer Part Number
PSMN012-80PS
Description
Manufacturer
NXP Semiconductors
Datasheet

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5. Thermal characteristics
Table 5.
PSMN012-80PS_2
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th(j-mb)
10
10
10
10
10
10
10
(A)
10
I
-1
-1
-2
-3
-4
D
3
2
1
1
10
values
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration; typical
1
-6
δ = 0.5
0.2
0.05
0.1
0.02
Thermal characteristics
Parameter
thermal resistance from
junction to mounting
base
Limit R
single shot
DSon
= V
DS
10
/ I
-5
D
Conditions
see
Figure 4
10
10
-4
Rev. 02 — 25 June 2009
DC
10
-3
N-channel 80 V 11 mΩ standard level MOSFET
10
10
-2
2
100 μs
1 ms
10 ms
100 ms
10 μs
PSMN012-80PS
Min
-
V
10
P
DS
-1
(V)
Typ
0.65
t
p
T
t
© NXP B.V. 2009. All rights reserved.
p
(s)
003aad300
003aad007
δ =
Max
1
T
t
p
t
10
1
3
Unit
K/W
4 of 13

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