PSMN012-80PS NXP Semiconductors, PSMN012-80PS Datasheet - Page 6

• Manufacturer Part Number: PSMN012-80PS
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
[1]
[2]
PSMN012-80PS_2
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
Tested to JEDEC standards where applicable.
Measured 3 mm from package.
250
200
150
100
100
(A)
(A)
I
50
D
I
80
60
40
20
D
0
0
function of drain-source voltage; typical values
function of gate-source voltage; typical values
Output characteristics: drain current as a
Transfer characteristics: drain current as a
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
2
6.5
7
2
4
T
10
j
= 175 °C
…continued
3
6
4
Conditions
I
see
I
V
V
S
S
GS
DS
= 25 A; V
= 50 A; dI
(V) = 15
Figure 17
= 40 V
8
003aad029
003aad031
5
25 °C
V
V
DS
GS
5.5
4.5
6
5
(V)
(V)
GS
10
S
6
Rev. 02 — 25 June 2009
/dt = 100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
GS
R
(mΩ)
4000
3000
2000
(pF)
N-channel 80 V 11 mΩ standard level MOSFET
DSon
C
25
20
15
10
= 0 V;
5
of drain current; typical values
function of gate-source voltage; typical values
Drain-source on-state resistance as a function
Input and reverse transfer capacitances as a
0
2
5
V
GS
50
(V) = 15
C
C
4
iss
rss
5.5
PSMN012-80PS
100
Min
-
-
-
6
6
150
Typ
0.86
45
64
8
© NXP B.V. 2009. All rights reserved.
200
V
003aad035
003aad030
GS
Max
1.2
-
-
I
D
(A)
(V)
10
7
250
10
Unit
V
ns
nC
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