PSMN025-100D NXP Semiconductors, PSMN025-100D Datasheet - Page 5

• Manufacturer Part Number: PSMN025-100D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN025-100D
Product data sheet
Symbol
R
R
Fig 5.
th(j-mb)
th(j-a)
Transient thermal impedance from junction to mounting base as a function of pulse duration
Thermal characteristics
Parameter
thermal resistance from junction
to mounting base
thermal resistance from junction
to ambient
0.001
0.01
0.1
1
1E-06
Transient thermal impedance, Zth j-mb (K/W)
0.1
0.05
0.02
D = 0.5
0.2
single pulse
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1E-05
Conditions
see
SOT428 package ; printed-circuit board
mounted ; minimum footprint
Rev. 4 — 12 January 2012
Figure 5
1E-04
Pulse width, tp (s)
N-channel TrenchMOS SiliconMAX standard level FET
1E-03
1E-02
P
D
tp
T
1E-01
D = tp/T
lma018
1E+00
PSMN025-100D
Min
-
-
Typ
-
50
© NXP B.V. 2012. All rights reserved.
Max
1
-
Unit
K/W
K/W
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