PSMN025-100D NXP Semiconductors, PSMN025-100D Datasheet - Page 9

• Manufacturer Part Number: PSMN025-100D
• Description: SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN025-100D
Product data sheet
Fig 14. Input, output and reverse transfer capacitances
10000
1000
100
10
0.1
Capacitances, Ciss, Coss, Crss (pF)
as a function of drain-source voltage; typical
values
Drain-Source Voltage, VDS (V)
1
10
All information provided in this document is subject to legal disclaimers.
Rev. 4 — 12 January 2012
Coss
Crss
Ciss
lma026
100
N-channel TrenchMOS SiliconMAX standard level FET
Fig 15. Source current as a function of source-drain
50
45
40
35
30
25
20
15
10
5
0
0
Source-Drain Diode Current, IF (A)
VGS = 0 V
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
voltage; typical values
Source-Drain Voltage, VSDS (V)
175 C
PSMN025-100D
Tj = 25 C
© NXP B.V. 2012. All rights reserved.
1.1 1.2 1.3 1.4 1.5
lma028
9 of 14