PSMN070-200B NXP Semiconductors, PSMN070-200B Datasheet
PSMN070-200B
Available stocks
Related parts for PSMN070-200B
PSMN070-200B Summary of contents
Page 1
... PSMN070-200B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 — 14 December 2010 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. ...
Page 2
... I GS j(init) ≤ unclamped sup = 50 Ω ≤ sup Ω; unclamped R GS All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B Graphic symbol mbb076 3 Min - = 20 kΩ - -55 -55 ...
Page 3
... V (V) DS Fig 4. All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B 100 150 Normalized continuous drain current as a function of mounting base temperature 2 25 °C 10 prior to avalanche = 150 ° ...
Page 4
... Z th(j-mb) (K/W) 0.2 −1 10 0.1 0.05 P 0.02 −2 10 single pulse −3 10 −6 −5 −4 − All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B Min Typ - - - 50 003aae567 t p δ −2 − (s) p Max Unit 0.6 K/W - K/W © ...
Page 5
... ° ° /dt = -100 A/µ ° All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B Min Typ Max 200 - - 178 - - 500 - 0 ...
Page 6
... Fig 7. 003aae570 = 25 ° (V) GS Fig 9. 003aae572 V 100 180 T (°C) j Fig 11. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B 0.20 4.2 V DS(on) 4.4 V (Ω) 4.6 V 0.16 4 0.08 0. °C j Drain-source on-state resistance as a function of drain current ...
Page 7
... Fig 13. Input, output and reverse transfer capacitances 003aae577 = 160 100 Q (nC) G Fig 15. Source (diode forward) current as a function of All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B (pF − MHz function of drain-source voltage ...
Page 8
... max. 1.60 10.30 2.90 15.80 11 2.54 1.20 9.70 2.10 14.80 REFERENCES JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B mounting base 2.60 2.20 EUROPEAN ISSUE DATE PROJECTION 05-02-11 06-03-16 © NXP B.V. 2010. All rights reserved. SOT404 ...
Page 9
... The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors. • Legal texts have been adapted to the new company name where appropriate. • Type number PSMN070-200B separated from data sheet PSMN070-200_SERIES_HG v.3. Product specification - All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 ...
Page 10
... In case an individual agreement is concluded only the terms and conditions of the respective All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B © NXP B.V. 2010. All rights reserved ...
Page 11
... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 14 December 2010 PSMN070-200B Trademarks © NXP B.V. 2010. All rights reserved ...
Page 12
... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 14 December 2010 Document identifier: PSMN070-200B ...