PSMN070-200B /T3 NXP Semiconductors, PSMN070-200B /T3 Datasheet
PSMN070-200B /T3
Manufacturer Part Number
PSMN070-200B /T3
Description
MOSFET TAPE13 PWR-MOS
Manufacturer
NXP Semiconductors
Datasheet
1.PSMN070-200B_T3.pdf
(12 pages)
Specifications of PSMN070-200B /T3
Product Category
MOSFET
Rohs
yes
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
35 A
Resistance Drain-source Rds (on)
0.07 Ohms
Configuration
Single
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Package / Case
SOT-404
Fall Time
90 ns
Minimum Operating Temperature
- 55 C
Power Dissipation
250 W
Rise Time
100 ns
Factory Pack Quantity
800
Typical Turn-off Delay Time
80 ns
Part # Aliases
PSMN070-200B,118
1. Product profile
1.1 General description
1.2 Features and benefits
1.3 Applications
1.4 Quick reference data
SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in
a plastic package using TrenchMOS technology. This product is designed and qualified for
use in computing, communications, consumer and industrial applications only.
Table 1.
Symbol
V
I
P
Static characteristics
R
Dynamic characteristics
Q
D
DS
tot
DSon
GD
PSMN070-200B
N-channel TrenchMOS SiliconMAX standard level FET
Rev. 04 — 14 December 2010
Higher operating power due to low
thermal resistance
Low conduction losses due to low
on-state resistance
DC-to-DC converters
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
drain-source on-state
resistance
gate-drain charge
Conditions
T
T
V
T
V
V
j
mb
j
GS
GS
DS
≥ 25 °C; T
= 25 °C
= 25 °C
= 160 V; T
= 10 V; I
= 10 V; I
Suitable for high frequency
applications due to fast switching
characteristics
Switched-mode power supplies
j
D
D
≤ 175 °C
= 17 A;
= 35 A;
j
= 25 °C
Min
-
-
-
-
-
Product data sheet
Typ
-
-
-
60
28
Max Unit
200
35
250
70
-
V
A
W
mΩ
nC
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