PSMN1R2-25YL NXP Semiconductors, PSMN1R2-25YL Datasheet - Page 4

• Manufacturer Part Number: PSMN1R2-25YL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
5. Thermal characteristics
Table 5.
PSMN1R2-25YL_1
Product data sheet
Symbol
R
Fig 3.
Fig 4.
th(j-mb)
Z
(K/W)
th (j-mb)
I
D
10
10
10
10
10
10
(A)
10
10
10
-1
-1
-2
-3
-4
4
3
2
1
1
10
10
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Transient thermal impedance from junction to mounting base as a function of pulse duration
-1
-6
δ = 0.5
0.05
0.2
0.02
Thermal characteristics
0.1
single shot
Parameter
thermal resistance from
junction to mounting
base
10
Limit R
-5
dson
= V
DS
Conditions
see
10
/ I
D
-4
Figure 4
1
Rev. 01 — 25 June 2009
10
-3
DC
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
10
-2
10
10
-1
PSMN1R2-25YL
Min
-
V
DS
(V)
P
10 us
100 us
1 ms
10 ms
100 ms
1
Typ
0.4
t
p
T
© NXP B.V. 2009. All rights reserved.
t
p
(s)
003aad199
003aad142
δ =
Max
1
T
t
p
t
10
10
2
Unit
K/W
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