PSMN1R2-25YL NXP Semiconductors, PSMN1R2-25YL Datasheet - Page 7

• Manufacturer Part Number: PSMN1R2-25YL
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R2-25YL_1
Product data sheet
Fig 7.
Fig 9.
V
(A)
I
GS (th)
(V)
D
120
90
60
30
3
2
1
0
0
function of drain-source voltage; typical values
-60
junction temperature
Output characteristics: drain current as a
Gate-source threshold voltage as a function of
0
10
3.5
V
GS
(V) = 3
0
1
max
min
typ
60
2
120
3
003aad131
003a a c337
T
V
j
DS
(°C)
2.8
2.6
2.4
2.2
(V)
180
4
Rev. 01 — 25 June 2009
N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK
Fig 8.
Fig 10. Drain-source on-state resistance as a function
R
(mΩ)
DS(on)
10
10
10
10
10
10
(A)
I
D
-1
-2
-3
-4
-5
-6
10
8
6
4
2
0
gate-source voltage
of drain current; typical values
Sub-threshold drain current as a function of
0
0
20
2.6
min
1
PSMN1R2-25YL
40
60
2.8
typ
2
V
GS
© NXP B.V. 2009. All rights reserved.
V
80
GS
(V) = 10
003aab271
003aad132
max
I
(V)
3.5
D
3
(A)
100
3
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