PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet - Page 3

• Manufacturer Part Number: PSMN1R5-25YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
PSMN1R5-25YL_1
Product data sheet
Fig 1.
Fig 3.
10
10
10
(A)
250
200
150
100
I
(A)
10
D
I
50
D
4
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
Limit R
100
(1)
DSon
= V
150
DS
T
/ I
003aac900
mb
D
1
(°C)
200
Rev. 01 — 16 June 2009
Fig 2.
P
(%)
der
120
80
40
DC
0
function of mounting base temperature
Normalized total power dissipation as a
0
10
N-channel TrenchMOS logic level FET
50
PSMN1R5-25YL
100
V
DS
(V)
100 μs
1 ms
10 ms
100 ms
10 μs
150
© NXP B.V. 2009. All rights reserved.
T
003aac901
mb
03aa15
(°C)
10
200
2
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