PSMN1R5-25YL NXP Semiconductors, PSMN1R5-25YL Datasheet - Page 6

• Manufacturer Part Number: PSMN1R5-25YL
• Description: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology
• Manufacturer: NXP Semiconductors

NXP Semiconductors
Table 6.
PSMN1R5-25YL_1
Product data sheet
Symbol
Source-drain diode
V
t
Q
rr
Fig 5.
Fig 7.
SD
r
(S)
180
g
150
120
(A)
I
80
60
40
20
fs
90
60
30
D
0
0
function of gate-source voltage; typical values
drain current; typical values
Transfer characteristics: drain current as a
Forward transconductance as a function of
0
0
Characteristics
Parameter
source-drain voltage
reverse recovery time
recovered charge
1
T
20
j
= 150 ˚C
[1]
…continued
Tested to JEDEC standards where applicable.
2
40
Conditions
I
see
I
V
S
S
25 ˚C
DS
= 25 A; V
= 20 A; dI
3
Figure 17
= 20 V
I
V
D
003aac903
003aac909
GS
(A)
(V)
GS
60
S
4
Rev. 01 — 16 June 2009
/dt = -100 A/µs; V
= 0 V; T
j
= 25 °C;
Fig 6.
Fig 8.
R
(mΩ)
(A)
GS
DSon
I
180
150
120
D
4
3
2
1
0
90
60
30
0
= 0 V;
0
function of drain-source voltage; typical values
of drain current; typical values
Output characteristics: drain current as a
Drain-source on-state resistance as a function
0
10
3.6
3.4
4
3.2
N-channel TrenchMOS logic level FET
2
50
PSMN1R5-25YL
4
Min
-
-
-
6
100
Typ
0.78
43
50
V
GS
V
GS
(V) = 2.4
© NXP B.V. 2009. All rights reserved.
(V) = 3.4
8
I
D
003aac902
003aac910
V
(A)
Max
1.2
-
-
DS
10
2.8
2.6
(V)
4
3
150
10
Unit
V
ns
nC
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