PSMN2R0-60ES NXP Semiconductors, PSMN2R0-60ES Datasheet
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PSMN2R0-60ES
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PSMN2R0-60ES Summary of contents
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... PSMN2R0-60ES N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Rev. 02 — 19 April 2011 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Simplified outline SOT226 (I2PAK) Description plastic single-ended package (I2PAK); TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Graphic symbol mbb076 Version SOT226 © NXP B.V. 2011. All rights reserved ...
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... GS 003aaf754 120 P der (%) 150 200 ( ° Fig 2. Normalized total power dissipation as a function of mounting base temperature All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min - = 20 kΩ -20 [1] Figure 1 - [1] Figure 1 - Figure -55 -55 - [1] ...
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... Safe operating area; continuous and peak drain currents as a function of drain-source voltage PSMN2R0-60ES Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK D 1 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES 003aaf753 =10 μ 100 μ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-60ES Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Conditions see Figure 4 Vertical in free air - All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min Typ Max - 0.22 0. 003aaf752 tp δ ...
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... Figure MHz °C; see Figure 0.4 Ω 4.7 Ω G(ext) D All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min Typ Max 4 0. 500 = 25 ° ...
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... 120 0 I (A) D Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Min Typ Max Unit - 0.8 1 003aaf743 = 175 ° ° ...
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... −60 1 (V) DS Fig 10. Gate-source threshold voltage as a function of All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Input and reverse transfer capacitances as a function of gate-source voltage, typical values max typ min 0 ...
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... V (V) GS Fig 12. Drain-source on-state resistance as a function 003aaf747 120 180 T (°C) j Fig 14. Gate charge waveform definitions All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES 10 DSon 8 4.8 V ( 100 of drain current; typical values ...
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... Fig 16. Input, output and reverse transfer capacitances 200 I S (A) 160 120 175 ° 0.3 0.6 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES function of drain-source voltage; typical values 003aaf750 = 25 ° C ...
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... max 0.7 1.6 10.3 11 2.54 0.4 1.2 9.7 REFERENCES JEDEC JEITA TO-262 All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES mounting base 15.0 3.30 2.6 13.5 2.79 2.2 EUROPEAN PROJECTION SOT226 ISSUE DATE 06-02-14 09-08-25 © NXP B.V. 2011. All rights reserved. ...
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... NXP Semiconductors 8. Revision history Table 7. Revision history Document ID Release date PSMN2R0-60ES v.2 20110419 • Modifications: Status changed from objective to product. • Various changes to content. PSMN2R0-60ES v.1 20110117 PSMN2R0-60ES Product data sheet N-channel 60 V 2.2 mΩ standard level MOSFET in I2PAK Data sheet status Change notice ...
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... Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES © NXP B.V. 2011. All rights reserved ...
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... TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V. HD Radio and HD Radio logo — are trademarks of iBiquity Digital Corporation. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 02 — 19 April 2011 PSMN2R0-60ES Trademarks © NXP B.V. 2011. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2011. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 19 April 2011 Document identifier: PSMN2R0-60ES ...