PSMN2R0-30PL,127 NXP Semiconductors, PSMN2R0-30PL,127 Datasheet
PSMN2R0-30PL,127
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934063917127
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PSMN2R0-30PL,127 Summary of contents
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... PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET Rev. 01 — 24 June 2009 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 °C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. ...
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... Table 3. Ordering information Type number Package Name Description PSMN2R0-30PL TO-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB PSMN2R0-30PL_1 Product data sheet PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET Simplified outline SOT78 (TO-220AB) Rev. 01 — 24 June 2009 Graphic symbol D G ...
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... ° 100 j(init Ω; unclamped R GS 003aad248 120 P der (%) 150 200 0 T (°C) mb Fig 2. Normalized total power dissipation as a function of mounting base temperature Rev. 01 — 24 June 2009 PSMN2R0-30PL Min Max - -20 20 [1] - 100 [1] - 100 Figure 3 - 943 - 211 -55 175 -55 175 [1] - 100 - 943 ≤ ...
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... Transient thermal impedance from junction to mounting base as a function of pulse duration PSMN2R0-30PL_1 Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET = DSon Conditions see Figure Rev. 01 — 24 June 2009 PSMN2R0-30PL 003aad295 10 μs 100 μ 100 (V) DS Min Typ Max - 0.41 0.71 003aad247 t p δ ...
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... see Figure 13; see Figure 4 see Figure 13; see Figure see Figure 13; see Figure MHz °C; see Figure 0.5 Ω 4 4.7 Ω R G(ext) Rev. 01 — 24 June 2009 PSMN2R0-30PL Min Typ Max Unit 1.3 1.7 2. µ µ 100 100 2.8 mΩ ...
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... Transfer characteristics: drain current as a function of gate-source voltage; typical values 003aad257 8 R DSon (mΩ 100 0 I (A) D Fig 8. Drain source on-state resistance as a function of gate-source voltage; typical values Rev. 01 — 24 June 2009 PSMN2R0-30PL Min Typ Max Unit - 0.76 1 003aad254 = 175 ° ° ...
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... R DSon (mΩ 120 180 ( ° Fig 12. Drain-source on-state resistance as a function of drain current; typical values Rev. 01 — 24 June 2009 PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET 003a a c982 max typ min 0 60 120 T (°C) j 003aad250 3 3 (V) = ...
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... C I iss S ( oss 40 C rss (V) DS Fig 16. Source current as a function of source-drain voltage; typical values Rev. 01 — 24 June 2009 PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET 003aad255 V = 12V (nC) G 003aad256 = 175 ° °C 0 0 © NXP B.V. 2009. All rights reserved. ...
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... Fig 17. Input and reverse transfer capacitances as a function of gate-source voltage; typical values PSMN2R0-30PL_1 Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET 003aad252 C iss C rss 2 (V) GS Rev. 01 — 24 June 2009 PSMN2R0-30PL © NXP B.V. 2009. All rights reserved ...
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... 0.7 16.0 6.6 10.3 15.0 2.54 0.4 15.2 5.9 9.7 12.8 REFERENCES JEDEC JEITA SC-46 3-lead TO-220AB Rev. 01 — 24 June 2009 PSMN2R0-30PL N-channel 30 V 2.1 mΩ logic level MOSFET mounting base Q c ( max. 3.30 3.8 3.0 2.6 3.0 2.79 3.5 2 ...
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... Revision history Table 7. Revision history Document ID Release date PSMN2R0-30PL_1 20090624 PSMN2R0-30PL_1 Product data sheet N-channel 30 V 2.1 mΩ logic level MOSFET Data sheet status Change notice Product data sheet - Rev. 01 — 24 June 2009 PSMN2R0-30PL Supersedes - © NXP B.V. 2009. All rights reserved ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. TrenchMOS — trademark of NXP B.V. http://www.nxp.com salesaddresses@nxp.com Rev. 01 — 24 June 2009 PSMN2R0-30PL © NXP B.V. 2009. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2009. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: PSMN2R0-30PL_1 All rights reserved. Date of release: 24 June 2009 ...